IVPS100-PTB - Improved Vertical Parallel Structure
Tip width characterizer with an array of 5 lines, line width varying from 50 nm to 130 nm in steps of 20 nm.
Designed in collaboration with Physikalisch Technische Bundesanstalt, Braunschweig, Germany.
Specifications
| Material |
Silicon |
| Width of line |
increasing from 50 nm to 130 nm in steps of 20 nm
actual linewidth is delivered for each chip |
| Pitch |
500 nm ± 10nm |
| Depth of line |
~ 1 µm |
| Surface/sidewall angle |
< 90° ± 0,5° |
| Sidewall parallelity |
< 1° |
| Top corner radius |
< 10 nm |
